Energetics and local vibrations of theDXcenter in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.13205/fulltext
Reference52 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
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3. Pressure and compositional dependences of the Hall coefficient inAlxGa1−xAsand their significance
4. Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System -- a Novel Short Period AlAs/n-GaAs Superlattice --
5. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments
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