Hall factor of dopedn-type GaAs andn-type InP
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.34.8947/fulltext
Reference11 articles.
1. Auto-épitaxie et propriétés d'As–Ga obtenu par épitaxie en phase vapeur à partir de composés organo-métalliques
2. Electron Mobility in High‐Purity GaAs
3. Electrical characteristics of III–V compounds grown by MOVPE
4. Variable-range-hopping conductivity in compensatedn-type GaAs
5. The electrical characterisation of semiconductors
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4. Residual Shallow Donor- and Acceptor-Impurities in SSD- and LEC-Grown High-Purity InP Crystals;Defect and Diffusion Forum;2001-11
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