Temperature characteristic of carrier scattering and dark resistivity of semi-insulating GaAs
Author:
Affiliation:
1. Department of Applied Physics, Xi'an University of Technology, Xi'an 710048, China
2. School of Physics, University of Wollongong, Wollongong, New South Wales 2522, Australia
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Natural Science Basic Research Program of Shaanxi Province
Australian Research Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0071963
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1. Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switches
2. Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes
3. Optical absorption mechanism of GaAs photoconductive semiconductor switch
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5. GaAs-based microelectromechanical terahertz bolometers fabricated on high-resistivity Si substrates using wafer bonding technique
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