In situESR study to detect the diffusion of free H and creation of dangling bonds in hydrogenated amorphous silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.245204/fulltext
Reference54 articles.
1. Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
2. Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon
3. Hydrogen in crystalline semiconductors
4. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
5. Hydrogen/Deuterium Interaction With CMOS Transistor Device Structure: Sintering Process Studied by Sims
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