Control of thermoelectric properties in Mn-substituted Fe2TiSi epilayers
Author:
Funder
Japan Society for the Promotion of Science
Japan Science and Technology Corporation
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.054203/fulltext
Reference42 articles.
1. Simple rules for the understanding of Heusler compounds
2. Semiconductorlike Behavior of Electrical Resistivity in Heusler-typeFe2VAlCompound
3. Electronic Structure and Transport Properties of Pseudogap System Fe2VAl
4. Thermal and transport properties of the Heusler-typeFe2VAl1−xGex(0≤x≤0.20)alloys: Effect of doping on lattice thermal conductivity, electrical resistivity, and Seebeck coefficient
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1. Temperature dependence of the mechanical properties of Heusler Fe2TiSi and Fe2TiSn using the Quasi-Harmonic Approximation;Computational Condensed Matter;2023-12
2. Physical properties of the full Heusler-type Ru2-Fe NbAl (x = 0.00–0.50) alloys;Journal of Alloys and Compounds;2023-06
3. Electronic, optical and huge figure of merit of MnFeTe Heuslerene;International Journal of Modern Physics B;2023-05-18
4. Epitaxial Mn2VAl films with L21-ordered structure for all-Heusler stacks;Journal of Magnetism and Magnetic Materials;2022-11
5. Thermoelectric properties of composition-controlled Fe2TiSi-based full-Heusler thin films;Applied Physics Express;2022-07-20
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