Electronic, optical and huge figure of merit of MnFeTe Heuslerene

Author:

Azin-Sanjabod Mohammad Reza1,nedaee-shakarab Bashir1ORCID,Azizian-Kalandaragh Yashar2,Boochani Arash34,Akbari Hossein1

Affiliation:

1. Department of Physics, Ardabil Branch, Islamic Azad University, Ardabil, Iran

2. Department of Physics, University of Mohaghegh Ardabili, P. O. Box 179, Ardabil, Iran

3. Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran

4. Quantum Technologies Research Center (QTRC), Science and Research Branch, Islamic Azad University, Tehran, Iran

Abstract

Based on the density functional theory (DFT) calculations, the structural, electronic, optical and thermoelectric properties of the MnFeTe Heuslerene compound have been investigated. The total energy change curve in terms of volume refers to the ground state point and equilibrium volume. By applying mBJ approximation, this compound has perfect half-metallic behavior of 100% spin polarization at the Fermi level with 7[Formula: see text] magnetic moment. Optical calculations show that the semiconductor behavior with an optical absorption gap occurred by incident light perpendicular to the MnFeTe Heuslerene plane. The figure of merit coefficient (ZT) has reached 3.5 at 50[Formula: see text]K temperature, which makes it an excellent candidate for thermoelectric applications. Also, the power factor (PF) of this compound has reached its maximum value at room temperature.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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