Evidence for magnon excitation contribution to the magnetoresistance behavior during thermal annealing in CoFeB/MgO/CoFeB magnetic tunnel junctions-Reference-Cited by-同舟云学术

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Evidence for magnon excitation contribution to the magnetoresistance behavior during thermal annealing in CoFeB/MgO/CoFeB magnetic tunnel junctions

Published:2011-06-30 Issue:22 Volume:83 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ma Q. L.,Wang S. G.,Wei H. X.,Liu H. F.,Zhang X.-G.,Han X. F.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.224430/fulltext

Reference33 articles.

1. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

2. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

3. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

4. Interfacial Resonance State Probed by Spin-Polarized Tunneling in EpitaxialFe/MgO/FeTunnel Junctions

5. Temperature dependence of giant tunnel magnetoresistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnon excitation-induced spin memory loss in epitaxial L10-FePt/MgO/L10-FePt magnetic tunnel junctions;Applied Physics Letters;2024-08-26

2. MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers;Scientific Reports;2017-02-24

3. High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications;Scientific Reports;2017-02

4. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control;Scientific Reports;2015-12-14

5. Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions;Journal of Applied Physics;2015-02-28

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