MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep43064.pdf
Reference34 articles.
1. Chen, E. et al. Advances and future prospects of spin-transfer torque random access memory. IEEE Trans. Magn. 46, 1873 (2010).
2. Khvalkovskiy, A. V. et al. Basic principles of STT-MRAM cell operation in memory arrays. J. Phys. D: Appl. Phys. 46, 074001 (2013).
3. Wang, K. L., Alzate, J. G. & Amiri, P. K. Low-power non-volatile spintronic memory: STT-RAM and beyond. J. Phys. D: Appl. Phys. 46, 074003 (2013).
4. Ikeda, S. et al. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction. Nat. Mater. 9, 721 (2010).
5. Carcia, P. F. Perpendicular magnetic anisotropy in Pd/Co and Pt/Co thin film layered structures. J. Appl. Phys. 63, 5066 (1998).
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