P-P and As-As isovalent impurity pairs in GaN: Interaction of deept2levels
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.9943/fulltext
Reference32 articles.
1. The incorporation of arsenic in GaN by metalorganic chemical vapor deposition
2. Electronic properties of arsenic-doped gallium nitride
3. Band gaps of GaPN and GaAsN alloys
4. Deep electronic gap levels induced by isovalent P and As impurities in GaN
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