Electric-dipole spin-resonance study on extended defects in Czochralski-grown silicon developed by thermal treatment
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.1511/fulltext
Reference18 articles.
1. Early stages of oxygen segregation and precipitation in silicon
2. The role of silicon self-interstitials in the formation of thermally induced rod-like defects in Cz silicon
3. Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniques
4. Thermal donors in silicon: oxygen clusters or self-interstitial aggregates
5. Correlations between thermal donor formation, rod-like defect formation, and oxygen reduction during low-temperature annealing of CZ-grown silicon
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