Charge state of vacancy defects in Eu-doped GaN-Reference-Cited by-同舟云学术

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Charge state of vacancy defects in Eu-doped GaN

Published:2017-08-31 Issue:6 Volume:96 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mitchell B.,Hernandez N.,Lee D.,Koizumi A.,Fujiwara Y.,Dierolf V.

Funder

National Science Foundation

Japan Society for the Promotion of Science

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.064308/fulltext

Reference46 articles.

1. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

2. Optically active centers in Eu implanted, Euin situdoped GaN, and Eu doped GaN quantum dots

3. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

4. Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

5. Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing Electronic and Magnetic Properties in Eu‐Doped GaN Nanowires via p‐f Hybridization of Eu‐Defect Complexes;Advanced Theory and Simulations;2024-06-09

2. Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu;Journal of Luminescence;2024-06

3. Intense optical activation of Eu-doped KTiOAsO4 crystal induced by ion implantation;Optical Materials;2024-04

4. An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN;AIP Advances;2024-02-01

5. Crystal-field analysis and models of Eu-emission centers with C3 symmetry in in situ Eu- and Mg-codoping GaN layers;Journal of Luminescence;2023-10

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