Magnesium acceptor in gallium nitride. II. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of its dual nature and optical properties-Reference-Cited by-同舟云学术

Magnesium acceptor in gallium nitride. II. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of its dual nature and optical properties

Published:2018-05-17 Issue:20 Volume:97 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Demchenko D. O.,Diallo I. C.,Reshchikov M. A.

Funder

National Science Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.205205/fulltext

Reference48 articles.

1. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

2. Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state

3. Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

4. Self-compensation due to point defects in Mg-doped GaN

5. Anisotropic polaron localization and spontaneous symmetry breaking: Comparison of cation-site acceptors in GaN and ZnO

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of acceptors in GaN;Physical Review B;2024-07-15

2. Nitrogen vacancy–acceptor complexes in gallium nitride;Journal of Applied Physics;2024-04-15

3. Overcoming the compensation of acceptors in GaN:Mg by defect complex formation;APL Materials;2023-08-01

4. Revisiting the substitutional Mg acceptor binding energy of AlN;Physical Review B;2023-07-14

5. Determination of CN deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach;Journal of Applied Physics;2023-03-28