Amorphous defect clusters of pure Si and type inversion in Si detectors
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.104111/fulltext
Reference50 articles.
1. Defect evolution in irradiated silicon detector material
2. Radiation induced bulk damage in silicon detectors
3. Bulk damage effects in irradiated silicon detectors due to clustered divacancies
4. Simulation of non-ionising energy loss and defect formation in silicon
5. Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
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