Vacancy defect complexes in silicon: Charges and spin order-Reference-Cited by-同舟云学术

Vacancy defect complexes in silicon: Charges and spin order

Published:2016-11-14 Issue:19 Volume:94 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Liu Yu,Pan Ruiqun,Zhang Xinghong,Han Jiecai,Yuan Quan,Tian Ying,Yuan Ye,Liu Fang,Wang Yutian,N'Diaye Alpha T.,Arenholz Elke,Chen Xiaolong,Sun Young,Song Bo,Zhou Shengqiang

Funder

National Natural Science Foundation of China

Basic Energy Sciences

U.S. Department of Energy

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.195204/fulltext

Reference45 articles.

1. Pushing the Limits

2. Annealing of Heavily Arsenic-Doped Silicon: Electrical Deactivation and a New Defect Complex

3. Complex Dynamical Phenomena in Heavily Arsenic Doped Silicon

4. Identification of Vacancy-Impurity Complexes in Highlyn-Type Si

5. Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si

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