Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor-Reference-Cited by-同舟云学术

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Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

Published:2015-11-11 Issue:20 Volume:92 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ishioka Kunie,Brixius Kristina,Höfer Ulrich,Rustagi Avinash,Thatcher Evan M.,Stanton Christopher J.,Petek Hrvoje

Funder

Deutsche Forschungsgemeinschaft

National Science Foundation

Alexander von Humboldt-Stiftung

Chinese Academy of Sciences

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.92.205203/fulltext

Reference59 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. All-optical switching in a laterally coupled microring resonator by carrier injection

3. Advances in group III-nitride-based deep UV light-emitting diode technology

4. Semiconductor-based photocatalysts and photoelectrochemical cells for solar fuel generation: a review

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