Nitrogen passivation induced by atomic hydrogen: TheGaP1−yNycase
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.201303/fulltext
Reference25 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN‐DOPED GaP p‐n JUNCTIONS
3. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
4. Effects of nitrogen on the band structure of GaNxP1−x alloys
5. Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band
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