Surface core-level shift of InSb(111)-2×2
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.4476/fulltext
Reference26 articles.
1. Angular resolved ups of surface states on GaAs(1̄1̄1̄) prepared by molecular beam epitaxy
2. Semiconductor Surfaces and Interfaces
3. Vacancy-Buckling Model for the (2×2) GaAs(111) Surface
4. Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray Diffraction
5. X-ray determination of the GaSb(111)2×2 surface structure
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1. Semiconductor-insulator Interfaces, High κ Dielectrics on (In)GaAs;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-04-25
2. Cleaning method of InSb [1̄1̄1̄] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy;Journal of Semiconductors;2011-05
3. Analysis of GaSb and AlSb reconstructions on GaSb(111)A- andB-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction;Physical Review B;2011-04-21
4. Reconstruction of the InSb (111)In surface as a result of sulfur adsorption;Semiconductors;2007-05
5. Growth of anα-Sn film on an InSb(111)A−(2×2)surface;Physical Review B;2004-12-28
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