X-ray determination of the GaSb(111)2×2 surface structure-Reference-Cited by-同舟云学术

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X-ray determination of the GaSb(111)2×2 surface structure

Published:1987-08 Issue:3 Volume:186 Page:499-510
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Feidenhans'l R.,Nielsen M.,Grey F.,Johnson R.L.,Robinson I.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference16 articles.

1. Vacancy-Buckling Model for the (2×2) GaAs(111) Surface

2. Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs

3. Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray Diffraction

4. Atomic geometry of the 2×2 GaP(111) surface

5. (2×2) reconstructions of the {111} polar surfaces of GaAs

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1. Recent Progress in Surface X-ray Diffraction;Journal of the Vacuum Society of Japan;2016

2. Ab initio study of atomic disorder on As-rich GaAs(111)A surface;Surface Science;2015-11

3. Surface Crystallography;Surface and Interface Science;2013-11-13

4. The physical origin of the InSb(111)A surface reconstruction transient;Surface Science;2012-09

5. Study of Initial Growth Layer of GaSb on Si(111) by Scanning Tunneling Microscopy;Japanese Journal of Applied Physics;2011-08-22

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