Transverse diffusion of minority carriers confined near the GaAs surface plane
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.13533/fulltext
Reference23 articles.
1. The Mobility and Life of Injected Holes and Electrons in Germanium
2. Evaluation of the diffusion length of minority carriers in bulk GaAs
3. Evaluation of the minority carrier diffusion length and edge surface‐recombination velocity in GaAsp/nsolar cells
4. Minority‐carrier diffusion lengths in GaP/GaAsxP1−xstrained‐layer superlattices
5. Depletion-electric-field-induced changes in second-harmonic generation from GaAs
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1. Phenethylammonium Functionalization Enhances Near-Surface Carrier Diffusion in Hybrid Perovskites;Journal of the American Chemical Society;2020-08-26
2. Defect-limited carrier diffusion in In0.53Ga0.47As-InP single quantum well;Physica B: Condensed Matter;1999-12
3. Characterization of semiconductor interfaces by second-harmonic generation;Surface Science Reports;1999-11
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