Evaluation of the minority carrier diffusion length and edge surface‐recombination velocity in GaAsp/nsolar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351494
Reference8 articles.
1. Theory and Experiment for a Germaniump−nJunction
2. Scanning electron microscope studies of electroluminescent diodes of GaAs and GaP II. Analysis of GaAs line scan traces
3. Scanning Electron Microscope Characterization of GaP Red‐Emitting Diodes
4. Use of Schottky‐diode collectors for SEM determination of bulk diffusion lengths
5. Evaluation of diffusion length and surface‐recombination velocity from a planar‐collector‐geometry electron‐beam‐induced current scan
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1. Determination of material parameters from regions close to the collector using electron beam-induced current;IEEE Transactions on Electron Devices;2002-08
2. Cathodoluminescence analysis of cleaved facets of a ZnSe p–n junction;Journal of Applied Physics;2000-04-15
3. A unified description of two voltage‐varying methods for evaluating surface recombination velocity from electron‐beam‐induced current: Application to normal‐ and planar‐collector configurations;Journal of Applied Physics;1996-03-15
4. Transverse diffusion of minority carriers confined near the GaAs surface plane;Physical Review B;1995-05-15
5. The effect of beamwidth on the analysis of electron‐beam‐induced current line scans;Journal of Applied Physics;1995-04
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