Formation of vacancy-impurity complexes in heavily Zn-doped InP
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.115209/fulltext
Reference31 articles.
1. Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
2. Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials
3. Vacancy‐Zn complexes in InP studied by positrons
4. Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP
5. On the contribution of vacancy complexes to the saturation of the carrier concentration in zinc doped InP
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