Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.10257/fulltext
Reference18 articles.
1. Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers
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3. Planewaves, Pseudopotentials and the LAPW Method
4. Inhomogeneous Electron Gas
5. Self-Consistent Equations Including Exchange and Correlation Effects
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