Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and6H−SiC
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.155214/fulltext
Reference21 articles.
1. Luminescence of irradiated β-SiC
2. Radiation induced defects in CVD-grown 3C-SiC
3. Photoluminescence of radiation induced defects in 3C‐SiC epitaxially grown on Si
4. Annealing processes of vacancy‐type defects in electron‐irradiated and as‐grown 6H‐SiC studied by positron lifetime spectroscopy
5. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
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