Optical properties of GaAs/AlxGa1−xAs quantum wells disordered by ion implantation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.1509/fulltext
Reference21 articles.
1. Carrier capture in intermixed quantum wires with sharp lateral confinement
2. Quantum Dots and Quantum Wires with High Optical Quality by Implantation-Induced Intermixing
3. Implantation enhanced interdiffusion in GaAs/GaAlAs quantum structures
4. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
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