Plasma-enhanced chemical vapordeposition SiO2 film after ion implantation induces quantum well intermixing
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/BF02841217.pdf
Reference11 articles.
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2. Djie H S, Arokiaraj J, Mei T,et al. Large Blueshift in InGaAsÕInGaAsP Laser Structure using Inductively Coupled Argon Plasma-enhanced Quantum Well Intermixing [J].J. Vac. Sci. Technol. B, 2003, 21(4): 1–4
3. Ooi B S, McIlvaney K, Street Michael W,et al. Selective Quantum-well Intermixing in GaAs-AlGaAs Structures Using Impurity-free Vacancy Diffusion[J].IEEE J. Quantum Electronics, 1997, 33: 1784–1792
4. Zhang S S, Thompson D A and Robinson B J. Quantum Well Intermixing Enhanced by InP Grown by He-plasma Assisted GaS Source MBE[J].Semicond. Sci. Technol., 2003, 18: 535–540
5. Teng J H, Chua S J, Huang Y H,et al. Multi-Wavelength Lasers Fabricated by an Al Layer Controlled Quantum well Intermixing Technology [J].J. Appl. Phys., 2000, 88: 3458–3462
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