Self-compensation due to point defects in Mg-doped GaN
Author:
Funder
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.165207/fulltext
Reference64 articles.
1. GaN: Processing, defects, and devices
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
4. Semiconductors: Data Handbook
5. Evidence for Two Mg Related Acceptors in GaN
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