Band-gap engineering of rutile-structured <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>SnO</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mtext>−</mml:mtext><mml:msub><mml:mi>GeO</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mtext>−</mml:mtext><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> alloy system-Reference-Cited by-同舟云学术

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Band-gap engineering of rutile-structured SnO2−GeO2−SiO2 alloy system

Published:2022-08-26 Issue:8 Volume:6 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Takane Hitoshi^ORCID,Ota Yuichi^ORCID,Wakamatsu Takeru,Araki Tsutomu,Tanaka Katsuhisa,Kaneko Kentaro^ORCID

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.6.084604/fulltext

Reference76 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

3. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

4. Exciton structure in the u.v.-absorption edge of tetragonal GeO2

5. Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping

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1. Epitaxial growth of rutile GeO2 via MOCVD;Applied Physics Letters;2024-09-02

2. Fabrication of Indium Tin Oxide Thin Films with Conductivity and Corrosion Resistance for the Metal Separators of Fuel Cells;Journal of the Society of Materials Science, Japan;2024-04-15

3. Essential role of lattice oxygen in hydrogen sensing reaction;Nature Communications;2024-04-08

4. Carrier density control of Sb-doped rutile-type SnO₂ thin films and fabrication of a vertical Schottky barrier diode;Applied Physics Express;2024-04-01

5. Bandgap engineering of spinel-structured oxide semiconductor alloys;Journal of Physics D: Applied Physics;2024-03-28

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