2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s-Reference-Cited by-同舟云学术

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2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

Published:2012 Issue:08 Volume:03 Page:881-886
ISSN:2153-1196
Container-title:Journal of Modern Physics
language:
Short-container-title:JMP

Author:

Charfeddine Manel,Belmabrouk Hafedh,Zaidi Mohamed Ali,Maaref Hassen

Publisher

Scientific Research Publishing, Inc.

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Calculation electrical conductivity a two-dimensional electron gas of AlGaN/GaN-based transistors with high electron mobility;Physica Scripta;2024-07-04

2. SiC and GaN Power Semiconductor Devices;Power Electronics Handbook;2024

3. Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study;Micromachines;2023-12-27

4. Modeling and Analysis of Electrical Characteristics of Symmetric Double Gate HEMT;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

5. Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer;Applied Physics B;2023-05-24

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