Towards substrate engineering of graphene–silicon Schottky diode photodetectors-Reference-Cited by-同舟云学术

Towards substrate engineering of graphene–silicon Schottky diode photodetectors

Published:2018 Issue:7 Volume:10 Page:3399-3409
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Selvi Hakan¹²³⁴^ORCID,Unsuree Nawapong¹²³⁴,Whittaker Eric¹²³⁴⁵,Halsall Matthew P.¹²³⁴⁵,Hill Ernie W.⁶²³⁴⁷,Thomas Andrew⁵²³⁴⁸,Parkinson Patrick⁵²³⁴⁹^ORCID,Echtermeyer Tim J.¹²³⁴⁵^ORCID

Affiliation:

1. School of Electrical & Electronic Engineering

2. University of Manchester

3. Manchester M13 9PL

4. UK

5. Photon Science Institute

6. National Graphene Institute

7. Manchester Centre For Mesoscience and Nanotechnology

8. School of Materials

9. School of Physics and Astronomy

Abstract

We present a systematic study of the performance of graphene–silicon Schottky diode photodetectors under varying operating conditions, demonstrating the influence of the substrate and interfacial oxide layer.

Funder

Royal Society

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C7NR09591K

Reference68 articles.

1. Experimental observation of the quantum Hall effect and Berry's phase in graphene

2. Graphene: Status and Prospects