Orbital design of topological insulators from two-dimensional semiconductors-Reference-Cited by-同舟云学术

Orbital design of topological insulators from two-dimensional semiconductors

Author:

Gao Lei¹²³⁴^ORCID,Sun Jia-Tao¹²³⁴⁵,Sethi Gurjyot⁶⁷⁸⁹,Zhang Yu-Yang¹²³⁴¹⁰^ORCID,Du Shixuan¹²³⁴¹⁰,Liu Feng⁶⁷⁸⁹

Affiliation:

1. Institute of Physics & University of Chinese Academy of Sciences

2. Chinese Academy of Sciences

3. Beijing 100190

4. P.R. China

5. School of Information and Electronics

6. Department of Materials Science and Engineering

7. University of Utah

8. Salt Lake City

9. USA

10. CAS Center for Excellence in Topological Quantum Computation

Abstract

An orbital design approach to convert two-dimensional semiconductors to topological insulators via selective atomic adsorption or strain is proposed.

Funder

National Basic Research Program of China

Chinese Academy of Sciences

National Natural Science Foundation of China

Beijing Nova Program

U.S. Department of Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference27 articles.

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