Combining GeO2 passivation strategies aiming at dielectric layers with superior properties on germanium substrates-Reference-Cited by-同舟云学术

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Combining GeO2 passivation strategies aiming at dielectric layers with superior properties on germanium substrates

Published:2019 Issue:27 Volume:7 Page:8465-8470
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Etcheverry Louise Patron¹²³⁴^ORCID,Boudinov Henri Ivanov¹²³⁴⁵,Vieira Soares Gabriel¹²³⁴⁵^ORCID,Radtke Cláudio¹²³⁴⁶^ORCID

Affiliation:

1. PGMicro

2. UFRGS

3. 91509-900 Porto Alegre

4. Brazil

5. Instituto de Física

6. Instituto de Química

Abstract

Hf and N incorporation in GeO₂ suppresses its volatilization and further oxidation of the Ge substrate.

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Fundação de Amparo à Pesquisa do Estado do Rio Grande do Sul

Ministério da Ciência, Tecnologia, Inovações e Comunicações

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC01831J

Reference17 articles.

1. Germanium CMOS potential from material and process perspectives: Be more positive about germanium

2. Desorption kinetics of GeO from GeO2/Ge structure

3. Isotope Tracing Study of GeO Desorption Mechanism from GeO2/Ge Stack Using73Ge and18O

4. Oxygen transport and GeO2 stability during thermal oxidation of Ge

5. Thermal oxidation kinetics of germanium

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3. Characterization of GeO2 films formed on Ge substrate using high pressure oxidation;Journal of Vacuum Science & Technology B;2021-07

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