Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires-Reference-Cited by-同舟云学术

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Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires

Published:2018 Issue:2 Volume:6 Page:565-573
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Neuderth P.¹²³⁴⁵^ORCID,Hille P.¹²³⁴⁶,Schörmann J.¹²³⁴⁵,Frank A.¹²³⁴,Reitz C.⁷⁸⁹⁴,Martí-Sánchez S.¹⁰¹¹¹²¹³,Mata M. de la¹⁰¹¹¹²¹³,Coll M.¹⁴¹⁵¹²¹³^ORCID,Arbiol J.¹⁰¹¹¹²¹³¹⁶^ORCID,Marschall R.¹⁷²³⁴⁵^ORCID,Eickhoff M.¹²³⁴⁶^ORCID

Affiliation:

1. Institute of Experimental Physics I

2. Justus Liebig University Giessen

3. 35392 Giessen

4. Germany

5. Center for Materials Research (LaMa)

6. Institute of Solid State Physics

7. Institute of Nanotechnology (INT)

8. Karlsruhe Institute of Technology (KIT)

9. 76344 Eggenstein-Leopoldshafen

10. Catalan Institute of Nanoscience and Nanotechnology (ICN2)

11. CSIC and BIST

12. 08193 Barcelona

13. Spain

14. Institut de Ciencia de Materials de Barcelona

15. ICMAB-CSIC

16. ICREA

17. Institute of Physical Chemistry

Abstract

An experimental strategy to assess the influence of ultra-thin oxide coatings on the performance of InGaN nanowire photoanodes is demonstrated.

Funder

European Cooperation in Science and Technology

Generalitat de Catalunya

Deutsche Forschungsgemeinschaft

Ministerio de Economía y Competitividad

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TA/C7TA08071A

Reference46 articles.

1. Recent progress in enhancing solar-to-hydrogen efficiency

2. Recent progress on photocatalytic and photoelectrochemical water splitting under visible light irradiation

3. A review and recent developments in photocatalytic water-splitting using TiO2 for hydrogen production

4. Universal alignment of hydrogen levels in semiconductors, insulators and solutions

5. Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

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