Role of the electrolyte layer in CMOS-compatible and oxide-based vertical three-terminal ECRAM-Reference-Cited by-同舟云学术

Role of the electrolyte layer in CMOS-compatible and oxide-based vertical three-terminal ECRAM

Published:2023 Issue:15 Volume:11 Page:5167-5173
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Han Geonhui¹,Seo Jongseon¹,Kim Hyejin¹,Lee Deaseok¹^ORCID

Affiliation:

1. Department of Electronics Materials Engineering, 20 Kwangwoon, Seoul, 01897, Nowon-Gu, Republic of Korea

Abstract

Vertical three-terminal electrochemical random access memory (ECRAM) is developed to demonstrate the feasibility of high-density integration and mass production. Improved retention was obtained by investigation of role of the electrolyte layer.

Funder

Institute for Information and Communications Technology Promotion

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC05552J

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