Indirect-to-direct bandgap transition in layered metal halide perovskite – CsPb<sub>2</sub>Br<sub>5</sub>-Reference-Cited by-同舟云学术

Indirect-to-direct bandgap transition in layered metal halide perovskite – CsPb₂Br₅

Published:2023 Issue:8 Volume:11 Page:4292-4301
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Wu Xiao¹^ORCID,Zhang Xiangyu¹²^ORCID,Yu Wei¹^ORCID,Zhou Yongxiang¹²^ORCID,Wong Walter¹^ORCID,He Weixin¹,Loh Kian Ping¹^ORCID,Jiang Xiao-Fang³^ORCID,Xu Qing-Hua¹²^ORCID

Affiliation:

1. Department of Chemistry, National University of Singapore (NUS), 3 Science Drive 3, Singapore 117543, Singapore

2. NUS (Suzhou) Research Institute, Suzhou 215123, China

3. Laboratory of Quantum Engineering and Quantum Material, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China

Abstract

Non-emissive CsPb2Br5 was found to convert into a highly efficient green emitter via simple thermal or photothermal annealing, which is ascribed to the thermally induced indirect-to-direct bandgap transition associated with defect formation.

Funder

National Natural Science Foundation of China

Ministry of Education – Singapore

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TA/D2TA06697A

Reference67 articles.

1. Soft perovskites stabilized by robust heterojunctions

2. Dopant‐Free Squaraine‐Based Polymeric Hole‐Transporting Materials with Comprehensive Passivation Effects for Efficient All‐Inorganic Perovskite Solar Cells