The precursor manipulation of La2Zr2O7 epi-layers annealed by rapid thermal annealing-Reference-Cited by-同舟云学术

The precursor manipulation of La2Zr2O7 epi-layers annealed by rapid thermal annealing

Published:2014 Issue:38 Volume:16 Page:8954-8959
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Cheng Yanling¹²³²,Suo Hongli³²,Ma Lin³²,Zhang Zili³²,Xu Yan³²,Liu Min³²

Affiliation:

1. Guangdong University of Technology

2. China

3. Beijing University of Technology

Abstract

This paper reports on the epitaxial growth of a La₂Zr₂O₇ (LZO) buffer layer on the cube-textured Ni-5 at.%W substrate with nitrates as the precursor salts.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE00112E

Reference16 articles.

1. La2Zr2O7single buffer layer for YBCO RABiTS coated conductors

2. Chemical solution deposition of YBa2Cu3O7−x coated conductors

3. Solution-derived textured oxide thin films—a review

4. Nitrate-based metalorganic deposition of CeO2 on yttria-stabilized zirconia

5. Heteroepitaxial growth of lanthanum aluminate films derived from mixed metal nitrates

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