Orientation symmetry breaking in self-assembled Ce1−xGdxO2−ynanowires derived from chemical solutions-Reference-Cited by-同舟云学术

Orientation symmetry breaking in self-assembled Ce1−xGdxO2−ynanowires derived from chemical solutions

Published:2016 Issue:99 Volume:6 Page:97226-97236
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Queraltó A.¹²³^ORCID,de la Mata M.¹²³⁴⁵,Martínez L.⁶⁷³,Magén C.⁸⁹¹⁰¹¹¹²,Gibert M.¹³¹⁴¹⁵¹⁶,Arbiol J.⁴⁵¹⁷²³,Hühne R.¹⁸¹⁹²⁰²¹,Obradors X.¹²³,Puig T.¹²³

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)

2. 08193 Bellaterra

3. Spain

4. Institut Català de Nanociència i Nanotecnologia (ICN2)

5. CSIC

6. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)

7. Madrid

8. Laboratorio de Microscopías Avanzadas (LMA)

9. Instituto de Nanociencia de Aragón (INA) – ARAID

10. Departamento de Física de la Materia Condensada

11. Universidad de Zaragoza

12. 50018 Zaragoza

13. Département de Physique de la Matière Quantique

14. University of Geneva

15. 1211 Genève 4

16. Switzerland

17. The Barcelona Institute of Science and Technology (BIST)

18. Institute for Metallic Materials

19. IFW Dresden

20. 01171 Dresden

21. Germany

Abstract

A novel approach to perform an independent study of the nucleation and coarsening of Ce_0.9Gd_0.1O_2−ynanowires is presented.

Funder

Departament d'Universitats, Recerca i Societat de la Informació

Consejo Superior de Investigaciones Científicas

European Social Fund

Ministerio de Economía y Competitividad

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA23717G

Reference88 articles.

1. Materials science challenges for high-temperature superconducting wire

2. Single Crystalline La0.7Sr0.3MnO3 Molecular Sieve Nanowires with High Temperature Ferromagnetism

3. The Promise and Perils of Wide-Bandgap Semiconductor Nanowires for Sensing, Electronic, and Photonic Applications

4. Oxide Nanoelectronics on Demand

5. Multiferroic and magnetoelectric materials

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