Influence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions-Reference-Cited by-同舟云学术

Influence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions

Published:2018 Issue:30 Volume:20 Page:19932-19937
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Jin Weifeng¹²³⁴⁵^ORCID,Mu Xiaojing¹²³⁴⁵,Zhang Kun⁶⁷⁸⁵,Shang Zhengguo¹²³⁴⁵,Dai Lun⁶⁷⁸⁵⁹

Affiliation:

1. Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education)

2. College of Optoelectronic Engineering

3. Chongqing University

4. Chongqing 400044

5. China

6. State Key Laboratory for Mesoscopic Physics and School of Physics

7. Peking University

8. Beijing 100871

9. Collaborative Innovation Center of Quantum Matter

Abstract

Schottky barrier inhomogeneity and its influence on the electrical transport mechanism of single nanowire-based Schottky junctions have been investigated.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP02859A

Reference34 articles.

1. Wavelength Tunable CdSe Nanowire Lasers Based on the Absorption-Emission-Absorption Process

2. High-Performance Organic-Inorganic Hybrid Photodetectors Based on P3HT:CdSe Nanowire Heterojunctions on Rigid and Flexible Substrates

3. Generation of Rashba Spin–Orbit Coupling in CdSe Nanowire by Ionic Liquid Gate

4. Piezo-Phototronic Effect of CdSe Nanowires

5. CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal–Semiconductor Field-Effect Transistors, and Inverters

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