Boosting the efficiency and stability of green InP quantum dot light emitting diodes by interface dipole modulation-Reference-Cited by-同舟云学术

Boosting the efficiency and stability of green InP quantum dot light emitting diodes by interface dipole modulation

Published:2022 Issue:21 Volume:10 Page:8192-8198
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Yimin¹,Wu Qianqian²,Wang Lin²^ORCID,Sun Zhongjiang²,Cao Fan²,Kong Lingmei²,Li Lufa²,Zhang Chengxi²^ORCID,Wang Sheng²,Zhang Zhijun¹^ORCID,Yang Xuyong²^ORCID

Affiliation:

1. School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, Shanghai 200072, China

2. Key Laboratory of Advanced Display and System Application of Ministry of Education, Shanghai University, Shanghai 200072, China

Abstract

We employed a multifunctional interlayer of phenylethylammonium bromide (PEABr): methylammonium bromine (MABr) to modulate the interfacial charge transfer in green InP QLEDs, which realizes an EQE of 7.8% and an operational lifetime of over 400 h.

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC01522F

Reference47 articles.

1. High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility

2. Development of InP Quantum Dot-Based Light-Emitting Diodes