Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires-Reference-Cited by-同舟云学术

Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Published:2019 Issue:40 Volume:11 Page:18550-18558
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Su Xiaojun¹²³⁴⁵,Zeng Xulu⁶⁷⁸⁹,Němec Hynek¹⁰¹¹¹²,Zou Xianshao⁵⁷⁸⁹,Zhang Wei¹²³⁴,Borgström Magnus T.⁶⁷⁸⁹^ORCID,Yartsev Arkady⁵⁷⁸⁹^ORCID

Affiliation:

1. School of Physics and Electronic Engineering

2. Guangzhou University

3. Guangzhou 510006

4. China

5. Chemical Physics and NanoLund

6. Solid State Physics and NanoLund

7. Lund University

8. Lund 22100

9. Sweden

10. Institute of Physics of the Czech Academy of Sciences

11. Prague 18221

12. Czech Republic

Abstract

The effect of hydrogen chloride etching on charge recombination processes of indium phosphide nanowires was studied by means of time-resolved spectroscopy.

Funder

Lunds Universitet

Knut och Alice Wallenbergs Stiftelse

Crafoordska Stiftelsen

Energimyndigheten

Vetenskapsrådet

China Scholarship Council

Grantová Agentura České Republiky

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR03187A

Reference53 articles.

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