Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties-Reference-Cited by-同舟云学术

Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

Published:2018 Issue:10 Volume:8 Page:5622-5628
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Nam Yunyong¹²³⁴⁵,Kim Hee-Ok⁶⁷⁸⁵,Cho Sung Haeng⁶⁷⁸⁵,Ko Park Sang-Hee¹²³⁴⁵

Affiliation:

1. Smart & Soft Materials & Devices Laboratory (SSMD)

2. Department of Materials Science and Engineering

3. Korea Advanced Institute of Science and Technology (KAIST)

4. Daejeon 34141

5. Korea

6. ICT Materials & Components Research Laboratory

7. Electronics and Telecommunications Research Institute (ETRI)

8. Daejeon

Abstract

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al₂O₃) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (T_dep).

Funder

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA12841J

Reference30 articles.

1. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

2. Fundamentals of zinc oxide as a semiconductor

3. Hydrogen local modes and shallow donors in ZnO

4. Hydrogen as a Cause of Doping in Zinc Oxide

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