Synthesis, characterization and electrical properties of silicon-doped graphene films-Reference-Cited by-同舟云学术

Synthesis, characterization and electrical properties of silicon-doped graphene films

Published:2015 Issue:24 Volume:3 Page:6301-6306
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Zegao¹²³⁴⁵,Li Pingjian¹²³⁴,Chen Yuanfu¹²³⁴,Liu Jingbo¹²³⁴,Zhang Wanli¹²³⁴,Guo Zheng⁶⁷⁸⁹,Dong Mingdong⁵⁷⁸⁹,Li Yanrong¹²³⁴

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices

2. University of Electronic Science and Technology of China

3. Chengdu 610054

4. P. R. China

5. Interdisciplinary Nanoscience Center (iNANO)

6. Department of Engineering

7. Aarhus University

8. DK-8000 Aarhus C

9. Denmark

Abstract

A silicon-doped graphene film was synthesized by CVD using triphenylsilane as a sole carbon and silicon source. The silicon-doped graphene exhibits a strong p-type feature and has a large hole mobility of 660 cm² V⁻¹ s⁻¹.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00563A

Reference40 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

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5. Current saturation in zero-bandgap, top-gated graphene field-effect transistors

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