B, N, and Si Single-Doping at Graphene/Cu (111) Interfaces to Adjust Electrical Properties-Reference-Cited by-同舟云学术

B, N, and Si Single-Doping at Graphene/Cu (111) Interfaces to Adjust Electrical Properties

Published:2023-06-16 Issue:26 Volume:39 Page:9172-9179
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Li Dongbo¹,Yang Ping¹^ORCID

Affiliation:

1. Laboratory of Advanced Design, Manufacturing & Reliability for MEMS/NEMS/OEDS, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, P.R. China

Funder

High Performance Computing Platform of Jiangsu University

Six Talent Peaks Project in Jiangsu Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.3c00952

Reference55 articles.

1. Thermal properties of triangle nitrogen-doped graphene nanoribbons

2. Plasma-induced synthesis of boron and nitrogen co-doped reduced graphene oxide for super-capacitors

3. Boron, nitrogen co-doped graphene: a superior electrocatalyst support and enhancing mechanism for methanol electrooxidation

4. Numerical study on the field-emission properties of a graphene–C60 composite

5. One-pot environment-friendly synthesis of boron doped graphene-SnO2 for anodic performance in Li ion battery

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