Dual-purpose tunnel oxide passivated contact on silicon photoelectrodes with high photovoltages for tandem photoelectrochemical devices enabling unassisted water splitting

Author:

Moon Choongman1,Alves Martinho Filipe Mesquita2ORCID,Jung Gihun1,Koh Jaehyuk1,Assar Alireza3,Nam Sung-Wook4ORCID,Canulescu Stela2,Shin Byungha1ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

2. Department of Photonics Engineering, Technical University of Denmark, DK-4000 Roskilde, Denmark

3. DTU Nanolab, National Centre for Nanofabrication and Characterization, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark

4. Department of Molecular Medicine, School of Medicine, Kyungpook National University, Daegu 41404, Republic of Korea

Abstract

Tunnel-oxide-passivated contact on a crystalline Si improves the photovoltage of Si photoelectrode to reach 640–650 mV even after a high-temperature process up to 600 °C, which makes it useful as the bottom cell of a monolithic tandem device.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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