Thermoelectric properties of zinc-doped Cu5Sn2Se7 and Cu5Sn2Te7
Author:
Affiliation:
1. Department of Chemistry and Waterloo Institute for Nanotechnology
2. University of Waterloo
3. Waterloo
4. Canada
5. National Institute for Materials Science
6. International Center for Materials Nanoarchitectonics (WPI-MANA)
7. Tsukuba
8. Japan
Abstract
The incorporation of Zn in Cu5Sn2Q7 adds one additional electron per formula unit, which results in a narrow band gap semiconductor with improved thermoelectric properties.
Funder
Natural Sciences and Engineering Research Council of Canada
Japan Society for the Promotion of Science
Japan Science and Technology Agency
Publisher
Royal Society of Chemistry (RSC)
Subject
Inorganic Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/DT/D1DT00615K
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