Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts-Reference-Cited by-同舟云学术

Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts

Published:2019 Issue:18 Volume:9 Page:10017-10023
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Aftab Sikandar¹²³⁴,Iqbal Muhammad Waqas⁵⁶⁷⁸⁹^ORCID,Afzal Amir Muhammad¹²³⁴,Khan M. Farooq¹²³⁴,Hussain Ghulam⁵⁶⁷⁸⁹,Waheed Hafiza Sumaira⁵⁶⁷⁸⁹,Kamran Muhammad Arshad⁵¹⁰¹¹¹²¹³^ORCID

Affiliation:

1. Department of Physics and the Astronomy and Graphene Research Institute

2. Sejong University

3. Seoul 05006

4. Korea

5. Department of Physics

6. Riphah Institute of Computing and Applied Sciences (RICAS)

7. Riphah International University

8. Lahore

9. Pakistan

10. College of Science

11. Majmaah University

12. Al-Zulfi 11932

13. Saudi Arabia

Abstract

Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance.

Funder

Higher Education Commission, Pakistan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C8RA09656B

Reference44 articles.

1. Ultrasensitive photodetectors based on monolayer MoS2

2. Large-area synthesis of monolayer WS2and its ambient-sensitive photo-detecting performance

3. Photosensor Device Based on Few-Layered WS2Films