Effects of surface halogenation on exciton relaxation in Si crystallites: prospects for photovoltaics-Reference-Cited by-同舟云学术

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Effects of surface halogenation on exciton relaxation in Si crystallites: prospects for photovoltaics

Published:2019 Issue:37 Volume:21 Page:20693-20705
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Derbenyova Natalia V.¹²³^ORCID,Shvetsov Artyom E.¹²³^ORCID,Konakov Anton A.¹²³^ORCID,Burdov Vladimir A.¹²³^ORCID

Affiliation:

1. Lobachevsky State University of Nizhny Novgorod

2. Nizhny Novgorod

3. Russian Federation

Abstract

It is shown that surface halogenation efficiently slows down Auger and radiative recombinations in Si nanocrystals.

Funder

Ministry of Education and Science of the Russian Federation

Russian Foundation for Basic Research

Council on grants of the President of the Russian Federation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP03714D

Reference77 articles.

1. Nanocrystals for silicon-based light-emitting and memory devices

2. Light emission from silicon nanocrystals

3. Quantum confinement in Si and Ge nanostructures: Theory and experiment

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination, multiplication, and transfer of electron-hole pairs in silicon nanocrystals: Effects of quantum confinement, doping, and surface chemistry;Journal of Luminescence;2021-05

2. Suppressing Auger Recombination in Multiply Excited Colloidal Silicon Nanocrystals with Ligand-Induced Hole Traps;The Journal of Physical Chemistry C;2021-01-25

3. Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects;Applied Sciences;2021-01-06

4. Multi-carrier processes in halogenated Si nanocrystals;The Journal of Chemical Physics;2020-09-21

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