Bandgap trimming and optical properties of Si3N4:Al microbelt phosphors for warm white light-emitting diodes
Author:
Affiliation:
1. Key Laboratory of Inorganic Coating Materials CAS
2. Shanghai Institute of Ceramics
3. Chinese Academy of Sciences
4. Shanghai 200050
5. China
Abstract
The bandgap energy of Si3N4:Al is precisely and gradually tailored from 2.58 to 2.85 eV by increasing the Al concentration. Si3N4:Al:Eu phosphors exhibiting a yellow-orange emission are promising for solid-state warm white lighting under blue chip excitation.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE01486A
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