Bipolar resistive switching property of Si3N4−xthin films depending on N deficiency
Author:
Affiliation:
1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center
2. Seoul National University
3. Seoul
4. Republic of Korea
5. Samsung Advanced Institute of Technology
6. Samsung Electronics
7. Suwon 16678
Abstract
This study investigates a bipolar resistive switching property of a silicon nitride thin film deposited by plasma enhanced chemical vapor deposition using the SiH4and NH3as the Si- and N-sources, respectively.
Funder
Ministry of Trade, Industry and Energy
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC05336K
Reference22 articles.
1. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
2. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
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4. A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
5. Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device
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