Area‐Type Electronic Bipolar Resistive Switching of Pt/Al 2 O 3 /Si 3 N 3.0 /Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics-Reference-Cited by-同舟云学术

Area‐Type Electronic Bipolar Resistive Switching of Pt/Al 2 O 3 /Si 3 N 3.0 /Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics

Published:2020-06-03 Issue:8 Volume:14 Page:2000209
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Kwon Dae Eun¹,Kim Jihun¹,Kwon Young Jae¹,Woo Kyung Seok¹,Yoon Jung Ho²,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and EngineeringInter-University Semiconductor Research CenterSeoul National University 1, Gwanak-ro, Gwanak-gu Seoul 08826 Republic of Korea

2. Center for Electronic MaterialsKorea Institute of Science and Technology 5, Hwarang-ro 14-gil, Seongbuk-gu Seoul 02792 Republic of Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000209

Reference24 articles.

1. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

2. Emerging memories: resistive switching mechanisms and current status

3. Field-induced resistive switching based on space-charge-limited current

4. Electronic bipolar resistance switching in an anti-serially connected Pt/TiO2/Pt structure for improved reliability

5. Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory

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