Self-assembled nc-Si-QD/a-SiC thin films from planar ICP-CVD plasma without H2-dilution: a combination of wide optical gap, high conductivity and preferred 〈220〉 crystallographic orientation, uniquely appropriate for nc-Si solar cells

Abstract

Spontaneous miniaturization and rapid synthesis of self-assembled nc-Si-QDs of 〈220〉 orientation in high crystalline nc-Si-QD/a-SiC thin films of high conductivity and wide optical gap is obtained in ICP-CVD, from (SiH₄ + CH₄)-plasma, without H₂-dilution.